Wide Bandgap (WBG) semiconductor materials are a category of advanced electronic materials with a much larger energy bandgap than conventional semiconductor materials such as silicon. As the fundamental raw materials for manufacturing high-performance electronic and optoelectronic devices, they possess unique physical and chemical properties that enable breakthroughs in device efficiency, voltage resistance, and reliability.
These materials are defined by their large bandgap structure, typically above 2.0 eV. This structural feature gives them exceptional material characteristics: high breakdown electric field strength, excellent thermal conductivity, high saturation electron velocity, and strong chemical stability. Unlike traditional semiconductor materials, WBG materials can maintain stable performance under high temperature, high voltage, and high-frequency conditions, making them ideal for advanced manufacturing.
The main wide bandgap semiconductor materials include Silicon Carbide (SiC), Gallium Nitride (GaN), Diamond, and Gallium Oxide (Ga₂O₃). SiC material features high thermal conductivity and high critical breakdown field, suitable for high-power and high-temperature applications. GaN material has high electron mobility and low loss, widely used in radio frequency and high-frequency power conversion. Diamond has an ultra-wide bandgap and ultra-high thermal conductivity, representing the next generation of extreme-condition electronic materials.
As core functional materials, wide bandgap semiconductor materials support the development of new energy vehicles, charging infrastructure, 5G communications, aerospace, and industrial power systems. Their superior material properties help reduce energy loss, improve system efficiency, and enable miniaturization and integration of devices.
Our elemental semiconductor products-including high-purity ingots, epitaxial wafers, and customized thin films-are manufactured to stringent industry standards. They serve as the ideal starting point for your advanced device development, from mainstream silicon CMOS to cutting-edge wide-bandgap and optoelectronic applications.
Explore our full product specifications, available in the sections below.
Eata Electronic provides high-purity, high-quality wide bandgap semiconductor materials and substrates, including crystal ingots, epitaxial wafers, and powder materials. With strict material processing and quality control, we support customers in producing high-performance semiconductor devices for the next generation of electronic applications. If you are interested in our services and products, please contact us for more information.
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Product Name |
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WBSM-0001 |
Silicon carbide substrate, 8-inch conductive type, automotive grade
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Inquiry
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WBSM-0002 |
Silicon carbide substrate, 8-inch conductive type, R&D grade
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Inquiry
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WBSM-0003 |
Silicon carbide substrate, 6-inch conductive type, automotive grade
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Inquiry
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WBSM-0004 |
Silicon carbide substrate, 6-inch conductive type, R&D grade
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Inquiry
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WBSM-0005 |
Silicon carbide substrate, 4-inch conductive type, automotive grade
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Inquiry
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WBSM-0006 |
Silicon carbide substrate, 4-inch conductive type, R&D grade
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Inquiry
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WBSM-0007 |
Silicon carbide substrate, 6-inch semi-insulating type, automotive grade
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Inquiry
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WBSM-0008 |
Silicon carbide substrate, 6-inch semi-insulating type, R&D grade
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Inquiry
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WBSM-0009 |
Silicon carbide substrate, 4-inch semi-insulating type, automotive grade
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Inquiry
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WBSM-0010 |
Silicon carbide substrate, 4-inch semi-insulating type, R&D grade
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Inquiry
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