Tungsten CMP Slurry for Multi-Level Metallization pH 2.5-3.5

Name: Tungsten CMP Slurry for Multi-Level Metallization pH 2.5-3.5
SKU: SMCPS-0055

Cat No:SMCPS-0055

Description

Tungsten CMP Slurry for Multi-Level Metallization pH 2.5-3.5 — engineered as a high-performance chemical mechanical planarization slurry for Multi-level W plug and interconnect. This formulation combines precisely controlled silica + fe(no3)3 catalyst abrasive particles with optimized chemical additives to achieve superior planarization with minimal surface defects.

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Basic Information

Intended Use / Application	CMP polishing solution formulated for Multi-level W plug and interconnect in semiconductor device manufacturing, providing controlled material removal with high planarization efficiency and low defectivity.
Material Type / Composition	Aqueous suspension of Silica + Fe(NO3)3 catalyst particles (100 nm) at 5-8 wt% solids; pH adjusted to 2.5-3.5 with organic/inorganic acids or bases; may contain oxidizers (H2O2, KIO3), corrosion inhibitors (BTA, TAZ), and surfactants. CMP slurry specifically formulated for Multi-level W plug and interconnect with optimized abrasive particle size distribution and chemical selectivity.
Purity / Grade	Electronic grade; metals contamination <100 ppb each (Na, K, Fe, Cu, etc.); particle filtration 0.5-1.0 μm
Physical Form / Appearance	Liquid slurry suspension, Silica + Fe(NO3)3 catalyst particles in aqueous chemistry, 5-8 wt% solids loading
Crystal Structure / Orientation	NO3
Growth Method / Synthesis	Synthesized and formulated under cleanroom conditions; ultra-pure water (18.2 MΩ·cm) used as base; filtered to remove oversized particles.
Storage Conditions	Store at 15-25°C; avoid freezing; keep container sealed when not in use; agitate or recirculate before use to re-suspend particles.
Shelf Life	6-12 months from manufacture date when stored properly; check particle size and pH before use on aged slurry.
Package Specifications	HDPE or fluoropolymer container; sizes: 1L, 1 Gallon, 5 Gallon, 55 Gallon drum. Recirculation-compatible packaging available.
Quality Control / Certification	Particle size mean ±10% of target; pH within ±0.3 of target; solids content ±1 wt% of target; large particle count (LPC) < specified threshold; removal rate verified on blanket wafer; defect density verified on patterned wafer. Electronic grade for semiconductor manufacturing; SEMI C78 compliant; RoHS compliant contingent on formulation; SDS available. Particle size D50 within ±5% of target; pH within ±0.2; removal rate within ±5% of reference; defect count within specification; solids content ±0.5 wt%.
Key Features	Optimized for Multi-level W plug and interconnect; 100 nm particle size distribution; pH 2.5-3.5 for targeted selectivity; W removal: ~350 nm/min; low defectivity.
Application Notes / Precautions	Shake or recirculate before use; verify particle size if stored >1 month. Monitor pad condition during extended polishing. Post-CMP clean immediately to prevent slurry drying and particle adhesion. Use dedicated dispense lines for each slurry type to avoid cross-contamination. Follow pad conditioning protocol. Some slurries are corrosive — use appropriate PPE. Dispense slurry onto rotating polishing pad at 100-300 mL/min flow rate; polish at 2-4 psi downforce, 30-90 rpm platen/carrier speed; post-CMP clean with deionized H2O and brush scrub or megasonic clean. Slurry pH buffered at {ph}; do not dilute with DI water (may alter chemistry and particle stability); use manufacturer diluent if dilution needed.
Compatibility	Compatible with industry-standard CMP tools (Applied Materials Mirra/Reflexion, Ebara, etc.); compatible with IC1000, Politex, and other standard polishing pads; post-CMP clean compatible with standard brush scrubbers and megasonic cleaners.

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