Copper Barrier CMP Slurry Alkaline pH 8-9 Low-k Compatible
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Copper Barrier CMP Slurry Alkaline pH 8-9 Low-k Compatible

Cat No:SMCPS-0080

Description

Alkaline barrier CMP slurry with low abrasive loading for copper barrier removal on porous low-k dielectric films. Minimal dielectric damage and k-value shift.

Basic Information

Intended Use / Application Alkaline barrier slurry for porous low-k dielectric CMP, Cu/low-k interconnect planarization, and advanced BEOL process integration.
Material Type / Composition Single crystal or film semiconductor material. Device-grade cmp polishing solution with verified specifications.
Purity / Grade Electronic grade; metals <100 ppb each
Physical Form / Appearance Liquid CMP slurry/solution
Growth Method / Synthesis Crystal growth and polishing per semiconductor industry standards.
Storage Conditions 15-25°C; avoid freezing; sealed container; agitate before use.
Shelf Life Indefinite under proper storage conditions.
Package Specifications Single wafer/piece in cleanroom-compatible sealed carrier.
Quality Control / Certification Verified per grade specifications; uniformity testing; defect inspection. SEMI standard compliant; RoHS compliant. Parameter variation within ±10% of specification; uniformity verified per batch.
Key Features CMP polishing solution for controlled material removal and planarization.
Application Notes / Precautions Handle with cleanroom gloves; inspect before use; follow material-specific safety protocols. Standard cleanroom processing; surface preparation per material type. Standard cleanroom cleaning protocols; deionized H2O rinse.
Compatibility Compatible with standard semiconductor fabrication processes.

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