Cobalt Barrier CMP Slurry pH 6-7 Low Defectivity

Name: Cobalt Barrier CMP Slurry pH 6-7 Low Defectivity
SKU: SMCPS-0067

Cat No:SMCPS-0067

Description

Cobalt Barrier CMP Slurry pH 6-7 Low Defectivity — engineered as a high-performance chemical mechanical planarization slurry for Cobalt contact and via CMP. This formulation combines precisely controlled silica + selective inhibitor abrasive particles with optimized chemical additives to achieve superior planarization with minimal surface defects.

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Basic Information

Intended Use / Application	CMP polishing solution formulated for Cobalt contact and via CMP in semiconductor device manufacturing, providing controlled material removal with high planarization efficiency and low defectivity.
Material Type / Composition	Aqueous suspension of Silica + selective inhibitor particles (30 nm) at 2-3 wt% solids; pH adjusted to 6-7 with organic/inorganic acids or bases; may contain oxidizers (H2O2, KIO3), corrosion inhibitors (BTA, TAZ), and surfactants. CMP slurry specifically formulated for Cobalt contact and via CMP with optimized abrasive particle size distribution and chemical selectivity.
Purity / Grade	Electronic grade; metals contamination <100 ppb each (Na, K, Fe, Cu, etc.); particle filtration 0.5-1.0 μm
Physical Form / Appearance	Liquid slurry suspension, Silica + selective inhibitor particles in aqueous chemistry, 2-3 wt% solids loading
Growth Method / Synthesis	Synthesized and formulated under cleanroom conditions; ultra-pure water (18.2 MΩ·cm) used as base; filtered to remove oversized particles.
Storage Conditions	Store at 15-25°C; avoid freezing; keep container sealed when not in use; agitate or recirculate before use to re-suspend particles.
Shelf Life	6-12 months from manufacture date when stored properly; check particle size and pH before use on aged slurry.
Package Specifications	HDPE or fluoropolymer container; sizes: 1L, 1 Gallon, 5 Gallon, 55 Gallon drum. Recirculation-compatible packaging available.
Quality Control / Certification	Particle size mean ±10% of target; pH within ±0.3 of target; solids content ±1 wt% of target; large particle count (LPC) < specified threshold; removal rate verified on blanket wafer; defect density verified on patterned wafer. Electronic grade for semiconductor manufacturing; SEMI C78 compliant; RoHS compliant contingent on formulation; SDS available. Particle size D50 within ±5% of target; pH within ±0.2; removal rate within ±5% of reference; defect count within specification; solids content ±0.5 wt%.
Key Features	Optimized for Cobalt contact and via CMP; 30 nm particle size distribution; pH 6-7 for targeted selectivity; Co removal: ~100 nm/min; low defectivity.
Application Notes / Precautions	Shake or recirculate before use; verify particle size if stored >1 month. Monitor pad condition during extended polishing. Post-CMP clean immediately to prevent slurry drying and particle adhesion. Use dedicated dispense lines for each slurry type to avoid cross-contamination. Follow pad conditioning protocol. Some slurries are corrosive — use appropriate PPE. Dispense slurry onto rotating polishing pad at 100-300 mL/min flow rate; polish at 2-4 psi downforce, 30-90 rpm platen/carrier speed; post-CMP clean with deionized H2O and brush scrub or megasonic clean. Slurry pH buffered at {ph}; do not dilute with DI water (may alter chemistry and particle stability); use manufacturer diluent if dilution needed.
Compatibility	Compatible with industry-standard CMP tools (Applied Materials Mirra/Reflexion, Ebara, etc.); compatible with IC1000, Politex, and other standard polishing pads; post-CMP clean compatible with standard brush scrubbers and megasonic cleaners.

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