CMP Polishing Slurry for Gallium Nitride GaN Substrate Planarization

Name: CMP Polishing Slurry for Gallium Nitride GaN Substrate Planarization
SKU: SMCPS-0026

Cat No:SMCPS-0026

Description

Engineered CMP slurry specifically optimized for gallium nitride (GaN) substrate planarization. GaN presents unique polishing challenges due to its high chemical inertness and hardness. This formulation incorporates tailored chemical additives to modify the GaN surface, enabling controlled material removal while preserving crystalline quality. Suitable for both Ga-polar and N-polar surface preparation for subsequent epitaxial growth.

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Basic Information

Intended Use / Application	GaN wafer CMP, GaN-on-sapphire template planarization, LED substrate preparation, RF device substrate finishing
Material Type / Composition	Specialized abrasive in reactive chemical medium
Purity / Grade	Electronic grade for III-V semiconductor processing
Physical Form / Appearance	Specialty colloidal dispersion
Dimensions / Size	N/A (liquid slurry)
Thickness	N/A
Crystal Structure / Orientation	N/A
Doping Type / Dopant	N/A
Resistivity / Conductivity	N/A
Bandgap	N/A
Carrier Mobility	N/A
Thermal Conductivity	N/A
Density	1.05-1.30 g/cm3 (formulation dependent)
Melting Point	N/A (aqueous suspension; freezing ~0 C)
Hardness	Abrasive-dependent: 6-9 Mohs (abrasive particle hardness)
Surface Finish / Roughness	N/A (liquid)
Growth Method / Synthesis	N/A
Wafer Diameter	Compatible with wafers up to 300 mm
Refractive Index	1.33-1.50
Dielectric Constant	N/A
Coefficient of Thermal Expansion	N/A
Youngs Modulus	N/A
Storage Conditions	Store at 5-35 C; avoid freezing; keep container tightly sealed; gentle agitation before dispensing
Shelf Life	12 months from manufacture date under proper storage conditions
Package Specifications	HDPE or fluoropolymer container, nitrogen blanketed, sealed; available from 1L to 200L
Quality Control / Certification	Particle size distribution, pH, solid content, removal rate verification, defectivity testing, metals analysis, zeta potential
Key Features	Engineered for specific semiconductor material CMP, optimized removal rate and selectivity, low defectivity, excellent within-wafer uniformity, stable dispersion prevents agglomeration and settling
Application Notes / Precautions	Use in well-ventilated CMP area; standard chemical handling PPE; avoid cross-contamination between different slurry types; dedicated polish pad and conditioning disk recommended per slurry type; do not freeze
Compatibility	Compatible with standard CMP polishing pads and tools; verify pad and conditioner compatibility for optimal performance; specific to target substrate material (SiC, GaN, sapphire, GaAs, Cu, W, oxide)
Operating Temperature Range	15-35 C process temperature; 5-35 C storage

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